Multivibrator with a tunnel diode

InGaN/GaN light-emitting diode with a polarization tunnel junction

Tunnel-Diode Low-Level Detection

An analysis of tnmel-diode low-level detection is presented for the purpose of explaining some of the unusual detection characteristics that occur under certain hias conditions. For example, in the vicinity of its inflection hias point, a tmmel diode exhibits a discriminator-like rectification behavior with two sensitivity peaks. When biased at one of these peaks, the diode is capable of unusua...

Demonstration of an amorphous carbon tunnel diode

Negative differential conductance in metal/amorphous nitrogenated carbon a-CNx /Si structures is demonstrated at room temperature. These metal-insulator-semiconductor tunnel diodes are fabricated by optimizing the tunnel barrier at the a-CNx /Si junction through the control of the band gap and nitrogen doping level in carbon where this a-C layer acts as a semi-insulator. A small electron tunnel...

Introduction to Nanoelectronics Topic – Resonant Tunnel Diode

Tunnel switch diode based on AlSbÕGaSb heterojunctions

We report on tunnel switch diodes based on AlSb barriers and GaSb p–n junctions grown by molecular beam epitaxy. These were the devices with thyristor like switching in the GaSb/AlSb system. The characteristic ‘‘S’’ shaped current–voltage curve was found to occur for structures with AlSb barriers less than 300 Å thick. The switching voltage and current density exhibited less sensitivity to barr...